feb.2010.version1.2 magnachipsemiconductorltd . 1 MDD5N50Gnchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 500 v drainsourcevoltage@tjmax v dss @t jmax 550 v gatesourcevoltage v gss 30 v t c =25 o c 4.4 a continuousdraincurrent t c =100 o c i d 2.8 a pulseddraincurrent (1) i dm 17.6 a t c =25 o c 70 powerdissipation derateabove25 o c p d 0.56 w w/ o c peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 230 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 110 thermalresistance,junctiontocase (1) r jc 1.8 o c/w MDD5N50G nchannelmosfet500v,4.4a,1.4 ? generaldescription theMDD5N50Gusesadvancedmagnachip s mosfettechnology,whichprovideslowonstate resistance,highswitchingperformanceand excellentquality. MDD5N50Gissuitabledeviceforsmps,hidand generalpurposeapplications. features v ds =500v v ds =550v @t jmax i d =4.4a @v gs =10v r ds(on) 1.4 @v gs =10v applications powersupply pfc ballast to 252 (dpak) g s d
feb.2010.version1.2 magnachipsemiconductorltd . 2 MDD5N50Gnchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus MDD5N50G 55~150 o c dpak reel halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 3.0 5.0 v draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =2.2a 1.15 1.4 forwardtransconductance g fs v ds =30v,i d =2.2a 5 s dynamiccharacteristics totalgatecharge q g 12.2 16 gatesourcecharge q gs 3.6 5 gatedraincharge q gd v ds =400v,i d =5.0a,v gs =10v (3) 4.7 6.5 nc inputcapacitance c iss 500 650 reversetransfercapacitance c rss 3 4.0 outputcapacitance c oss v ds =25v,v gs =0v,f=1.0mhz 65 85 pf turnon delaytime t d(on) 16 21 risetime t r 27 35 turnoffdelaytime t d(off) 30 39 falltime t f v gs =10v,v ds =250v,i d =5.0a, r g =25 (3) 25 33 ns drainsourcebodydiodecharacteristics maximumcontinuousdraintosource diodeforwardcurrent i s 4.4 a sourcedraindiodeforward voltage v sd i s =4.4a,v gs =0v 1.4 v bodydiodereverserecovery time t rr 270 ns bodydiodereverserecovery charge q rr i f =5.0a,dl/dt=100a/s (3) 1.8 c note: 1.pulsewidthisbasedonrjc&rjaandthemaxi mumallowedjunctiontemperatureof150c. 2.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturetj(ma x)=150 c. 3. i sd 5.0a,di/dt 200a/us,v dd =50v,r g =25,startingtj=25 c 4.l=16.5mh, i as =5.0a, v dd =50v,,r g =25,startingtj=25 c
feb.2010.version1.2 magnachipsemiconductorltd . 3 MDD5N50Gnchannelmosfet500v fig. 5 transfercharacteristics fig.1onregioncharacteristics fig. 2 on resistancevariationwith draincurrentandgatevoltage fig. 3 on resistancevariationwith temperature fig. 4 breakdown vo ltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 0 5 10 15 20 25 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a] 4 5 6 7 8 1 10 25 *notes; 1. v ds =30v 150 55 i d [a] v gs [v] 0.1 1 10 0.1 1 10 notes 1.250 ? pulsetest 2.t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 notes: 1.v gs =0v 2.250uspulsetest i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes: 1.v gs =10v 2.i d =2.5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c]
feb.2010.version1.2 magnachipsemiconductorltd . 4 MDD5N50Gnchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig. 10 maximum drain current v s. case temperature fig.11transientthermalresponsecurve fig .12 single pulse maximum power dissipation 0 2 4 6 8 10 12 0 2 4 6 8 10 400v 250v 100v note:i d =5.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 0.1 1 10 0 200 400 600 800 1000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 i d ,draincurrent[a] t c ,casetemperature[ ] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =1.8 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 singlepulse r thjc =1.8 /w t c =25 power(w) pulsewidth(s)
feb.2010.version1.2 magnachipsemiconductorltd . 5 MDD5N50Gnchannelmosfet500v physicaldimension dpak,3l dimensionsareinmillimeters,unlessotherwisespe cified worldwidesalessupportlocations
feb.2010.version1.2 magnachipsemiconductorltd . 6 MDD5N50Gnchannelmosfet500v worldwidesalessupportlocations disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd. u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room2003b,20/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com
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